AON6934A 30v dual asymmetric n-channel alphamos general description product summary q1 q2 30v 30v i d (at v gs =10v) 28a 36a r ds(on) (at v gs =10v) <5.2m w <2.9m w r ds(on) (at v gs = 4.5v) <9.5m w <4.4m w 100% uis tested application 100% rg tested symbol v ds v 20 2 0 30 max q2 units v v parameter gate-source voltage drain-source voltage absolute maximum ratings t a =25c unless otherwise noted ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al v ds max q1 top view bottom view pin1 dfn5x6 top view bottom view bottom view pin1 v gs i dm i as e as v ds spike v spike t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 29 24 35 29 steady-state 56 50 67 60 steady-state r q jc 3.3 3 4 3.8 thermal characteristics 3.6 4.3 2.3 2.7 junction and storage temperature range -55 to 150 w t a =70c 30 28 36 22 112 c w 22 24 33 28 20 2 0 a 144 units 46 26 53 a 13 v 12 gate-source voltage mj avalanche current c continuous drain current a 31 t c =100c pulsed drain current c continuous drain current g i d 32 17 t c =25c t c =100c power dissipation a p dsm t a =25c t a =25c power dissipation b i dsm t a =70c p d c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w maximum junction-to-case v 100ns avalanche energy l=0.05mh c 36 36 t c =25c rev 0 : oct. 2012 www.aosmd.com page 1 of 10
AON6934A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.8 2.2 v 4.3 5.2 t j =125c 6 7.2 7 9.5 m w g fs 91 s v sd 0.7 1 v i s 28 a c iss 1037 pf c oss 441 pf c rss 61 pf r g 0.7 1.5 2.3 w q g (10v) 15.5 22 nc q g (4.5v) 6.8 10 nc q gs 3.0 nc q gd 3.6 nc t d(on) 5.5 ns t r 3.3 ns t 18 ns gate resistance maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge v gs =10v, v ds =15v, r l =0.75 w , r =3 w v gs =0v, v ds =0v, f=1mhz forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a v ds =v gs i d =250 m a reverse transfer capacitance v gs =10v, i d =20a diode forward voltage i dss m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance m w v gs =0v, v ds =15v, f=1mhz switching parameters q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v t d(off) 18 ns t f 4.3 ns t rr 12.7 ns q rr 17.2 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time r gen =3 w i f =20a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev 0 : oct. 2012 www.aosmd.com page 2 of 10
AON6934A q1-channel: typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 7v 10v 5v 4.5v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a voltage (note e) i d =11.5a 25 c 125 c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0 : oct. 2012 www.aosmd.com page 3 of 10
AON6934A q1-channel: typical electrical and thermal characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 100ms 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =4 c/w rev 0 : oct. 2012 www.aosmd.com page 4 of 10
AON6934A q1-channel: typical electrical and thermal characteristics 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =67 c/w rev 0 : oct. 2012 www.aosmd.com page 5 of 10
AON6934A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.8 2.2 v 2.4 2.9 t j =125c 3.6 4.4 3.5 4.4 m w g fs 105 s v sd 0.7 1 v i s 36 a c iss 2010 pf c oss 898 pf c rss 124 pf r g 0.9 1.8 2.7 w q g (10v) 36 49 nc q g (4.5v) 17 23 nc q gs 6 nc q gd 8 nc t d(on) 7.5 ns t r 4.0 ns t 37.0 ns i d =10ma, v gs =0v v gs =10v, v ds =15v, i d =20a m w i dss m a forward transconductance v ds =v gs i d =250 m a v ds =0v, v gs = 20v v gs =10v, i d =20a v gs =4.5v, i d =20a zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage diode forward voltage v gs =10v, v ds =15v, r l =0.75 w , r =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz gate drain charge gate resistance i s =1a,v gs =0v turn-off delaytime v gs =0v, v ds =0v, f=1mhz gate source charge total gate charge v ds =5v, i d =20a switching parameters maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time total gate charge t d(off) 37.0 ns t f 7.5 ns t rr 14 ns q rr 20.3 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. r gen =3 w body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev 0 : oct. 2012 www.aosmd.com page 6 of 10
AON6934A q2-channel: typical electrical and thermal characteristics 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 10 20 30 40 50 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 4.5v 10v 3v (note e) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c rev 0 : oct. 2012 www.aosmd.com page 7 of 10
AON6934A q2-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 10ms 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c operating area (note f) (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3.8 c/w rev 0 : oct. 2012 www.aosmd.com page 8 of 10
AON6934A q2-channel: typical electrical and thermal characteristics 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) figure 14: single pulse power rating junction - to - ambient (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =60 c/w rev 0 : oct. 2012 www.aosmd.com page 9 of 10
AON6934A - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0 : oct. 2012 www.aosmd.com page 10 of 10
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